#JR1984594
signs in deep submicron CMOS FinFET processes
Take designs through productization and be involved in all stages of development
Work with multi-functional teams to optimize the designs
What we need to see :
BSEE or MSEE.
Candidate must have 5+ years of well-rounded high Speed memory (LPDDR, DDR, GDDR, HBM) or SerDes related design experience.
System level timing budgets, specs and analysis
In-depth understanding of deep submicron CMOS FinFET process and circuit design issues
Familiarity with device reliability, ESD and Latch-Up requirements
Supervise layout development and understand all ESD/Latch-Up, reliability rules; Broad circuit design and implementation knowledge with significant depth
Working Knowledge of package substrate, board design and power delivery is a plus. Working knowledge of Cadence custom design tools, various circuit simulators like Hspice, XA, FineSim, Spectre
Working knowledge of Verilog, Nanotime, Matlab is plus
Hands on with Lab test and measurement equipment is a plus
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We will ensure that individuals with disabilities are provided reasonable accommodation to participate in the job application or interview process, to perform essential job functions, and to receive other benefits and privileges of employment. Please contact us to request accommodation.